Ion implantation in optical fibres, proceedings of spie. In this second part, jim kawski from applieds varian semiconductor equipment business group explores how implant is used to make actual semiconductor devices. We are a community of more than 103,000 authors and editors from 3,291 institutions spanning 160 countries, including nobel prize winners and some of. First, the ability of ion implantation to accurately introduce a low concentration of doping atoms allows the substrate doping profile in the channel region under the gate to be increased in a controlled manner.
Iit 2018 abstract book 22nd international conference on ion. However, postimplant annealing step 900oc is required to anneal out defects. Ion implantation page 6 introduction ion implant is used to put specific amounts of ntype and ptype dopants dose into a semiconductor. As a service to our customers we are providing this early version of. This book focuses on the fundamentals, technologies and properties of ion irradiation of dielectric materials e. Sb form extended defect struc tures which show high thermal stability and also trans form to other defect phases rather than repair. Each of these will be briefly described and considered with respect to its advantages and disadvantages. Ion implantation into silicon causes crystalline lattice damage which results in an increase of the materials refractive index and therefore creates a platform for realization of various optical. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research. Energetic ions penetrate the surface of the wafer and then undergo a. Piii and thefourth was an interpretation of optical constant before and.
Thermal annealing effects on the optical properties of erbium erionimplanted al x ga 1. Ion implanted waveguide analysis chapter 5 optical effects of ion. Modulated interference effects and thermal wave monitoring of highdose ion implantation in semiconductors. An experiment on the modification of the optical constants of polymethylmethacrylate and polystyrene films by lightion bombardment is presented. Nuclear instruments and methods in physics research section b. Development of optical waveguides through multipleenergy. Modulated interference effects and thermal wave monitoring of.
Measured spectra were fitted to the calculated reflectance from two homogeneous implant layers on the unaffected bulk. Fibres are wound onto a bobin system for insertion into the implantation chamber. Ion implantation, as a surface modification technique, can modify the optical properties of an insulator surface. Vaz, structural and optical studies of au doped titanium oxide films, nucl. Under sufficiently high dose and energy, ions implanted into a semiconductor will produce an amorphous layer throughout the range in which nuclear stopping is the dominant mechanism for slowing the ions.
Ion implantation 101 part 2 this is the second part of our introduction to ion implantation. Ion channeling is another effect which may be important while implanting ions into. Ion implantation, diffusion, and solubility of nd and er in. Request pdf optical effects in silica glass during implantation of 60 kev cu. We then say that the dopant atom has been implanted into the wafer. Implant above the critical dose and use low temperature anneal to regrow material 2. It allows to precisely measure and control the doping concentration and pro le, avoids contamination by ltering the dopand gas through mass separation,and can be performed at room temperature thus avoiding unintentional di usion. Ion implantation defects amorphization secondary defects endofrange loops effect of defects onelectrical resistivitypn junction leakage currentdiffusionmechanical stress. It is shown that ion implantation is an efficient technique to modify the optical properties of polymers and that the values of their refractive index can be predicted from changes in the molecular refraction. Optical waveguides fabricated by ion implantationirradiation. Index termsdevice modeling, ion implantation, optical modulation, plasmadispersion effect, silicon photonics.
Ion implantation is widely used as a means of introducing radiation damage in materials. Ion implantation in optical fibres, proceedings of spie 10. Berkeley ee143 f2010 defects tutorial dopant activation boron implant 30min for. Optical characteristics of an oxyfluoride glass waveguide formed by. Conventional beamline ion implantation is a lineofsight process in which ions are extracted from an ion source, accelerated to high energy, and then bombard the workpiece. Survey of the literature regarding implantation on optical. The dose is accurately measured during implantation giving outstanding control and repeatability. After reaction with water, these holes can produce hydroxyl radicals with high redox oxidizing potential 2. Part one discussed why we need ion implantation and how an implanter works. Ion implantation in optical fibres ion implantation in optical fibres mcstay, d. Beginning with an overview of the basic physics and practical methods involved in ion implantation, the topics of optical absorption and luminescence are then discussed.
Ion velocity charge separation, drag passing ion causes internal electronic transitions because electrons can follow fields up to optical frequencies, velocities of 105 ms 100 times faster than phonons s e cv electronic losses dominate at higher ion. Extended structures in ion implan ted sb doped ge ge. We are a community of more than 103,000 authors and editors from 3,291 institutions spanning 160 countries, including nobel prize winners and some of the worlds mostcited researchers. Optical effects of ion implantation cambridge studies in. Design of ionimplanted mosfets with very small physical. Ion implantation and ion mixing have made possible the production of new materials having new properties and new phases or structures. Montecarlo ion implantation the monte carlo module takes into account all important implantation effects.
Pdf ion implantation for semiconductor doping and materials. In general, optical waveguides can be improved by widening the optical barrier or waveguide core through multiple energy ion implantations. Ion implantation, proceedings of the first international ion implantation conference, gordon and breach, new york 1971. New method for diagnostics of ion implantation induced charge. Design of optical waveguides must consider effects induced by the ion implantation process, such as modification of substrate density, polarizability and structure. The effect of exposure to the oxygen plasmaimmersionionimplantation o. Amorphization by ion implantation and subsequent defect annealing can easily be studied by rbs. Ion implantation influences surface properties of all types of material, whether. Berkeley ee143 f2010 defects tutorial 2 simple point defects elemental crystal. Development of optical waveguides through multipleenergy ion.
Moreover, the optical properties are closely related to the structure of the. New method for diagnostics of ion implantation induced. Subsequently, the ions are separated by mass, using an analyzing magnet. Some initial results on the implantation of single and multimode optical fibres are described. Optimization of ion implantation condition for depletion. Ion implantation 101 part 1ion implantation is one of the fundamental processes used to make microchips. High energy ion implantation, which is a surfacemodi. Pdf effects of low energy h ion implantation on the. Effects of ion implantation ion implantation commonly modifies the characteristics of the surface layer by introducing either ptype or ntype dopant ions into the host material. By analyzing the infrared reflection spectra of ion implanted gaas, the optical dispersion parameters have been determined as function of depth from the implanted surface. Long and short lengths of fibres as well as discrete elements along a fibre have been implanted. A planar waveguide can have confinement effect on light intensity in one direction.
Formation of au colloid particles in silica glass by ion. Structural change induced in laalotext removed by ion. In absorption spectra obtained from the implanted samples, growth of an fcenter band at 5. Inserting a smattering of boron or phosphorus atoms into the silicon crystal lattice allows us to control the flow of electricity through the silicon and make transistors. Over the past few years, ion implantation has been developed into a very powerful tool for ic fabrication. Optical effects of ion implantation 457 a has an index only slightly less than that of the unimplanted region c.
Modulated interference effects and thermal wave monitoring. A chapter on waveguide analysis then provides the background for a description of particular optical devices, such as waveguide lasers, mirrors, and novel nonlinear materials. Study of the effects of mev ag and au implantation on the optical properties of linbo3. Depending upon the exact conditions, the holes, oh radicals.
An experiment on the modification of the optical constants of polymethylmethacrylate and polystyrene films by light ion bombardment is presented. It is observed that the oxygen piii treatment can reduce both crystallize size and microstrain of znte thin. Optical effects in silica glass during implantation of 60. Ion beam insulator ion source disk wafers target holder disk wafer load and unload area 100kv power supply source, magnet, power supply figure 8. Jul 01, 2000 thermal annealing effects on the optical properties of erbium erionimplanted al x ga 1. Effects of low energy h ion implantation on the optical properties of znmgo thin films. Local modification of the optical constants of polymeric. Thus, the maximum damage roughly corresponds with the ion range, r p. As a service to our customers we are providing this early version of the manuscript. Fibres are wound onto a bobin system for insertion into for insertion into fibres fibres are the chamber. Very fast 1 12 wafer can take as little as 25 seconds for a moderate dose. Specific regions can be implanted using a variety of masking materials including photoresist.
Ion implantation equipment consists of an ion source to produce ions of the desired element, an accelerator to accelerate the ions to a high energy, and a target chamber. Optical effects in silica glass during implantation of 60 kev. Contrarily to the implantation of conventional semiconductors aiming in doping, the idea of ion bombardment of polymers lies in a. Obviously, implantationinduced color centers, which mainly contribute to the additional damping of visible light in the waveguiding layer in the asimplanted sample, can be re. Photorefractive properties of optical waveguides in fe. Pdf annealing effect on optical barrier in ionimplanted. Some, such as chemical reactivity, can increase a thousandfold, others such as birefringence, electrooptic and acoustic wave parameters are reduced.
The effects of ion implantation through very thin silicon. A side effect of ion implantation is the radiation damage that results from. They are extracted from the source and accelerated by an electrostatic field to energies of a few thousand electron volt kev. Applications of ion implantation for modification of tio. As an alternative, focused ion beam fib implantation of ions, for example, nitrogen 17 and silicon 18, can greatly simplify the implantation process by eliminating the need of. Applications of ion implantation for modification of tio 153 2. Raw silicon is neither a perfect insulator nor a perfect conductor. The effects of ion implantation were studied using optical absorption spectroscopy, rutherford backscattering spectroscopy and ion channeling rbsc and transmission electron microscopy tem. The objective of the material modification differs according to the location being doped. Structural and optical studies of au doped titanium oxide. Mohr skip to main content accessibility help we use cookies to distinguish you from other users and to provide you with a better experience on our websites. Ion velocity charge separation, drag passing ion causes internal electronic transitions because electrons can follow fields up to optical frequencies, velocities of 105 ms 100 times faster than phonons s e cv electronic losses dominate at higher ion velocities. Optimization of ion implantation condition for depletiontype. Annealing treatments of the samples are performed to improve the waveguide stability and to reduce losses.
The ions can alter the elemental composition of the target if the ions. The implant can be precisely customized to reach specific. Ion, implantation permits introduction of the dopant in silicon that is controllable, reproducible and free from undesirable side effects. Ion implantation, diffusion, and solubility of nd and er. Piii on the structural and optical constants of the same samples of different thicknesses were also investigated. A refractive index can be increased by ion implantation by changes in density and structure, by the addition of highpolarizability impurity ions, by a reduction of the plasma effect that increases the index and that is most important in the wavelength region far from the energy gap, and by absorption changing in the index in the region of the gap.
Introduction ptical modulators which encode a bit stream onto the optical carrier are an essential functional component for any optical communication links ranging from telecommunications to optical interconnects. Such profiles may be realized as the sum of a number of gaussians. Chapter 9 nitridation of gaas surface by low energy ion implantation. Ion implantation is a lowtemperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. Aboraia et al structural and optical properties of znte thin. The damage increases with the dose more ions produce more damage. Ion implantation, diffusion, and solubility of nd and er in linbo3 volume 6 issue 1 ch. One major property which can be controlled is the refractive index. Structural and optical studies of au doped titanium oxide films. Implant below the critical dose and use high temperature anneal to get rid of defects dopants can diffuse during high temperature anneal activation energy 34ev rapid thermal processing rtp or rapid thermal anneal rta ion implantation. Pdf ion implantation of germanium into silicon for. Ion implantation ii technology has been developed with a great economic success of industries of vlsi very largescale integrated circuit devices. This technique has become a common tool to modify surfaces of semiconductors, crystals and optical materials in order to obtain certain electrical, mechanical and optical properties.
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